Highly Precise Alignments Using Moire Diffraction Methods
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概要
- 論文の詳細を見る
Less than 40-nm alignments may be required in future processes for manufacturing 1 Gbit-DRAMs (Dynamic Random Access Memories). Alignment techniques using moire between two patterns are considered advantageous techniques, because patterns for moire can be easily fabricated in lithography processes. Highly precise alignments using moire technigues for mask alignments are proposed. The patterns on masks can be relatively arranged to standard patterns on a wafer by observing the diffraction beams from the moire between the patterns on the masks and a wafer. This techniques is called the moire diffraction method. The principles of this method, the fundamental experimental results and the implementarion to mask alignments are described.
- 社団法人応用物理学会の論文
- 1998-06-30
著者
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TORII Yasuhiro
Department of Operative Dentistry,
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Kawai Shigeru
Department Of Electronics University Of Industrial Technology
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Kawai Shigeru
Department Of Applied Biological Chemistry Shizuoka University
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Torii Yasuhiro
Department Of Electronics University Of Industrial Technology
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Kawai S
Denso Corp. Aichi Jpn
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ToriiORII Yasuhiro
Department of Electronics, University of Industrial Technology
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