Analysis of High-Acceleration-Voltage Scanning Electron Microscope Images

概要

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Scanning electron microscope (SEM) images of holes or trenches obtained at high acceleration voltages, such as 200 kV, are analyzed by computer simulation. Secondary electrons generated by forward-scattered primary electrons (SE1s), and those by backward-scattered primary electrons (SE2s) are calculated separately, although a detector catches both SE1 and SE2 without distinction. The straightforward penetration of the primary electrons accelerated at 200 kV gives large edge effects and slight lateral scattering in the sample. Therefore, the image contrast of the SE1 intensity, which provides information on surface topography, becomes high. Moreover, as the SE2 intensity is almost a uniform background, it becomes easy to extract the SE1 intensity from the detected secondary electrons. For observations of the inside structure of a sample, although the SE2 contrast is low at 200 kV, a small degree of lateral scattering in the sample results in a sharp image.
社団法人応用物理学会の論文
1998-12-30