Negative Resistance Characteristics and Oscillation Phenomena in Si Diodes
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概要
- 論文の詳細を見る
Examining the forward characteristic of a new type of Si diode, it was found that the diode showed a negative resistance characteristic at room temperature. This new type diode was formed from material-which was originally very high resistivity and contained proper concentration of trapping centers- into structures that injected one or two kinds of carriers. The diode not only shows the negative resistance characteristic, but also exhibits coherent oscillations when placed in a magnetic field applied perpendicularly to the forward current. Explanations for these phenomena are proposed by assuming the existence of narrow streams for the current.
- 社団法人応用物理学会の論文
- 1963-09-15
著者
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Homma Kazuaki
Department Of Electronics Tokyo Electrical Engineering College
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Homma Kazuaki
Department Of Bioengineering Faculty Of Engineering Soka University
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FUKAMI Toyoji
Department of Electronics, Tokyo Electrical Engineering College
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Fukami Toyoji
Department Of Electronics Tokyo Electrical Engineering College
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Fukami T.
Department of Electronics, Tokyo Electrical Engineering College
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