Influence of Device Parameters on Memory Performance of MNOS Structure
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概要
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The influence of various device parameters on the characteristics of MNOS (metal-nitride-oxide-silicon) memory devices has been examined. Three types of charge storage are found to exist according to the thickness of SiO_2 film and the specific conductivity of Si_3N_4 film; injection type, ion drift type and mixed type (where only negative charges are stored at the SiO_2-Si_3N_4 interface under both polarities of bias voltages). Furthermore, even if the thickness of Si_3N_4 film is changed with other parameters kept constant, no change of charge storage types is observed. It is considered that there are two discharging mechanisms, namely, the one where stored charges near the interface between SiO_2 and Si_3N_4 films flow through SiO_2 film into silicon and the other one where the stored charges flow into bulk region of Si_3N_4 film.
- 社団法人応用物理学会の論文
- 1972-04-05
著者
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Kobayashi Keizo
I.c. Division Nippon Electric Company Ltd.
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KOBAYASHI Keizo
I.C. Division, Nippon Electric Company, Ltd.
関連論文
- Properties of Vapor Deposited Silicon Nitride Films with Varying Excess Si Content
- Influence of Device Parameters on Memory Performance of MNOS Structure