Diffusion from SiO_2:Zn Spin-on Films into n-In_<0.53>Ga_<0.47>As

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概要

• 論文の詳細を見る

• Zn-diffusion from SiO_2:Zn spin-on films into n-InGaAs for the preparation of p-n junctions has been investigated. The measured p-n junction depths versus diffusion time are in accordance with a diffusion model which considers the spin-on film as an exhaustable diffusion Zn-source. Depending upon the composition of the SiO_2:Zn-films diffusion depths proportional to the square-root of diffusion time t or depths nearly independent of t were observed.

• 社団法人応用物理学会の論文
• 1986-07-20

著者

• Albrecht H

  Siemens Ag Research Laboratories

• Albrecht H.

  Siemens Ag Research Laboratories

• Lauterbach Ch.

  Siemens Ag Research Laboratories

関連論文

• Diffusion from SiO_2:Zn Spin-on Films into n-In_Ga_As
• Confirmation of Tunneling Current via Traps by DLTS Measurements in InGaAs Photodiodes

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