Characteristics of a Semi-Insulating InP:Fe Wafer

概要

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A semi-insulating InP:Fe wafer has been investigated by Hall effect measurements. A 2-inch semi-insulating InP:Fe wafer was divided into 63 squares of 5×5 mm^2, and 17 samples were selected along the <011> and <011> directions to determine the characteristics of the whole wafer. The resistivity, Hall mobility, Hall coefficient, and carrier concentration at room temperature were in the range of 2.1-4.6×10^7 ohm・cm, 1700-3000 cm^2/V・sec, 5.5-14×10^<10> cm^3/coul, and 4.5-11×10^7 cm<-3>, respectively. From the measured Hall mobilities the impurity scattering mobilities were calculated and the neutral impurity concentration was estimated as to be 0.85-2.6×10^<16> cm^<-3>. The resistivity distribution revealed that the 17 samples can be classified into 3 groups.
社団法人応用物理学会の論文
1986-11-20