Evaluation of the Piezoresistive Properties of Non-Single-Crystal Si Film

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概要

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• An improved means of evaluating piezoresistive properties (PR) of Si thin films is to measure the ratio of the longitudinal effect π_l, to the transverse effect π_l, in addition to the gauge factor, temperature coefficient of resistance and temperature coefficient of gauge factor. The PR made by various processes were evaluated. The property of p-type μc-Si:F:H made by d.c. glow discharge with a high power density and at 300-350℃ is excellent. This film showed similar symmetry to that of single Si;

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• KANDA Yozo

  Hamamatsu University School of Medicine

関連論文

• Second-Order Piezoresistance Coefficients of p-Type Silicon
• Second-Order Piezoresistance Coefficients of n-Type Silicon
• Origin of the Linear and Nonlinear Piezoresistance Effects in p-Type Silicon
• Evaluation of the Piezoresistive Properties of Non-Single-Crystal Si Film
• Graphical Representation of the Piezoresistance Coefficients in Silicon-Shear Coefficients in Plane

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