Influence of Low-Energy Atomic Hydrogen on Argon-Implanted Silicon Schottky Barriers

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概要

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• Low-energy (0.4 keV), high-dose (〜10^<18>cm^<-2>) H^+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.

• 社団法人応用物理学会の論文
• 1985-07-20

著者

• Ashok S.

  Engineering Science Program Department Of Engineering Science And Mechanics The Pennsylvania State U

• Ashok S.

  Engineering Science Program The Pennsylvania State University

• Giewont K.

  Engineering Science Program, The Pennsylvania State University

• Giewont K.

  Engineering Science Program The Pennsylvania State University

関連論文

• Si and GaAs SIS Heterostructure Solar Cells Using Spray-Deposited ITO : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Influence of Low-Energy Atomic Hydrogen on Argon-Implanted Silicon Schottky Barriers

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