Proximity Annealing of Sulfur-Implanted Gallium Arsenide Using a Strip Heater

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概要

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• A graphite strip heater has been employed for rapid (〜30 s) thermal annealing (RTA), at temperatures between 850 and 1150℃, of Cr-doped GaAs implanted with 120keV ^<32>S^+ with doses between 10^<13> and 10^<15>cm^<-2>. In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr.

• 社団法人応用物理学会の論文
• 1985-05-20

著者

• Banerjee S.

  Department Of Chemical Engineering University Of California Santa Barbara

• Baker J.

  Materials Research Laboratory University Of Illinois

• BANERJEE S.

  Department of Biochemistry, University College of Science

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