Improvements in MBE Grown Al_xGa_<1-x>As/GaAs Single Quantum Well Structures Resulting from Dimeric Arsenic

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概要

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• The effect of arsenic species on the photoluminescent response of GaAs/Al_xGa_<1-x>As single quantum well structures grown by molecular beam epitaxy was studied. At high substrate temperatures, e.g. 700℃, the luminescent properties were not highly sensitive to the arsenic species (dimeric or tetrameric) used. At lower substrate temperatures, however, the As species had a significant influence on the response. With a substrate temperature of 620℃, the intensity of the photoluminescence peak due to the quantum well increased by a factor of 2.5 in going from As_4 to As_2, primarily as a result of an improved inverted heterointerface. One proposed mechanism of improvement, the more effective cracking of arsenic at high substrate temperatures, is supported by these results.

• 社団法人応用物理学会の論文
• 1984-02-20

著者

• Masselink W.

  University Of Illinois:coordinated Science Laboratory:department Of Physics

• Morkoc H.

  University Of Illinois:department Of Electrical Engineering:coordinated Science Laboratory

• Klem J.

  University Of Illinois:department Of Electrical Engineering:coordinated Science Laboratory

• FISCHER R.

  University of Illinois

• SUN Y.

  University of Illinois

• KLEIN M.

  University of Illinois

• Klein M.

  University Of Illinois:coordinated Science Laboratory:department Of Physics:materials Research Labor

• Klein M.

  Universite Catholique De Louvain

• Fischer R.

  University Of Illinois:department Of Electrical Engineering:coordinated Science Laboratory

関連論文

• Improvements in MBE Grown Al_xGa_As/GaAs Single Quantum Well Structures Resulting from Dimeric Arsenic
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