Confirmation of Tunneling Current via Traps by DLTS Measurements in InGaAs Photodiodes

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概要

• 論文の詳細を見る

• A detailed analysis of the reverse characteristics of In_<0.53>Ga_<0.47>As pin-photodiodes at various temperatures reveals, besides generation, diffusion and band-to-band tunneling of carriers, an additional contribution to the dark current due to tunneling through an energy barrier of 0.16±0.02 eV. In deep-level transient spectroscopy measurements a thermal activation energy of 0.57±0.01 eV, equal to the gap energy minus the tunneling barrier, has been found. From these two measurements it can be concluded that thermal activation of deep traps and subsequent tunneling of carriers into band states leads to the additional dark current component.

• 社団法人応用物理学会の論文
• 1983-06-20

著者

• Albrecht H.

  Siemens Ag Research Laboratories

• TROMMER R.

  Siemens AG, Research Laboratories

• Trommer R.

  Siemens Ag Research Laboratories

関連論文

• Diffusion from SiO_2:Zn Spin-on Films into n-In_Ga_As
• Confirmation of Tunneling Current via Traps by DLTS Measurements in InGaAs Photodiodes

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