Inspection of Micro Devices over the Passivation Top-Layer Surface Using the Low Voltage SEM
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概要
- 論文の詳細を見る
Applicability of the low voltage scanning electron microscope to inspection of ICs and LSIs finished with the passivation layer was carefully explored. Experiments with kilo-electronvolt primaries demonstrated that there exist appropriate irradiating conditions of primaries where the passivation surface of MOSFET devices can be imaged without charging disturbances. It was shown that contrasts arise from different voltages applied to the electrodes underneath the passivation layer and also that they disappear as imaging continues. Linearities between the contrast variations and the applied voltages were found.
- 社団法人応用物理学会の論文
- 1983-10-20
著者
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IKEDA Susumu
Faculty of Engineering, Yamagata University
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Uchikawa Yoshiki
Faculty Of Engineering Nagoya University
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Ikeda Susumu
Faculty Of Science And Technology Meijo University
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Ikeda Susumu
Faculty Of Engineering Yamagata University
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