Effect of Adsorbates on the Trapping Properties in Hydrogenated Amorphous Silicon Films

スポンサーリンク

概要

• 論文の詳細を見る

• We have carried out the measurements of thermally stimulated currents in order to clarify the effect of adsorbates such as oxygen and water on the trapping properties in a-Si: H. The active trapping levels in samples annealed at 150℃ are estimated to be located at 0.36 eV and 0.41 eV for adsorption of oxygen and 0.49 eV for that of water on the surface of a-Si: H below the edge of the conduction band, respectively. Moreover, a trapping level which may be associated with bulk properties has been found at 0.22 eV.

• 社団法人応用物理学会の論文
• 1982-11-20

著者

• Yamaguchi Masaaki

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Modulated Photocurrent in Hydrogenated Amorphous Silicon
• Effect of Adsorbates on the Trapping Properties in Hydrogenated Amorphous Silicon Films

スポンサーリンク