Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current Measurements

概要

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Inhomogeneity in semi-insulating (SI)-GaAs has been examined by scanning leakage current (I_L) measurements. The observed leakage current exhibits broad intensity variation accompanying short period sharp fluctuation along both radial and pulling directions. The undoped SI-GaAs generally shows marked inhomogeneity of the leakage current compared with the Cr-doped GaAs. The broad I_L intensity variation along the radial direction is correlated with dislocation distribution. Thermal annealing at 850℃ for 1 hour in H_2 significantly smooths out the inhomogeneity.
社団法人応用物理学会の論文
1982-08-20