Raman Analysis of Wurtzite Silicon Islands in Silicon Oxide Deposited in N_2O-SiH_4 Plasma Process

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概要

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• We report on the deposition of stable wurtzite Si islands in a silicon oxide deposition process with N_2O-Silane plasma([SiH_4]< 2%). They were brought to the fore by Raman spectroscopy using a high resolution microprobe. By means of group theory, we were able to discriminate among these clusters, wurtzite silicon, diamond silicon and mixed crystals. We showed experimentally that they were the result of dust formation in the N_2O-SiH_4 radiofrequency discharge.

• 社団法人応用物理学会の論文
• 2000-02-15

著者

• Despax Bernard

  Laboratoire De Genie Electrique

• BANDET Jacqueline

  Laboratoire de Physique des Solides

• Bandet Jacqueline

  Laboratoire De Physiques Des Solides

• CAUMONT Michael

  Laboratoire de Physiques des Solides

• DATE Lucien

  Laboratoire de Genie Electrique

関連論文

• Comprehensive Analysis of an Isolation Area Obtained by Local Oxidation of Silicon Without Field Implant
• Selectively Disorder Activated Raman Scattering in Silicon Films
• Raman Analysis of Wurtzite Silicon Islands in Silicon Oxide Deposited in N_2O-SiH_4 Plasma Process
• Positive Charge Increase in Plasma Deposited Oxides Induced by Low Pressure Chemical Vapor Deposition of Silicon Nitride

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