1.55 μm Butt-Jointed Distrubuted Bragg Reflector Lasers Grown Entirely by Low-Pressure MOVPE : Waves, Optics and Quantum Electronics

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概要

• 論文の詳細を見る

• 1.55 μm distributed Bragg reflector lasers were fabricated entirely by low-pressure MOVPE growth. An active waveguide was connected to a passive waveguide by a butt-joint technique. In the butt-jointed structure, the optical field axis in the active region was matched to that in the passive region. Devices fabricated were operated at currents as low as 13 mA. Spectrum linewidth as narrow as 3.4 MHz was obtained at four times the threshold current.

• 社団法人応用物理学会の論文
• 1988-04-20

著者

• Tohmori Yuichi

  Ntt Opto-electronics Laboratories

• Oishi M

  Ntt Opto-electronics Laboratories

• OISHI Mamoru

  NTT Opto-Electronics Laboratories

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• 1.3/1.55-μm Full-Duplex WDM Optical Transceiver Modules for ATM-PON (PDS) Systems Using PLC-Hybrid-Integration and CMOS-IC Technologies (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• 1.3/1.55-μm Full-Duplex WDM Optical Transceiver Modules for ATM-PON (PDS) Systems Using PLC-Hybrid-Integration and CMOS-IC Technologies (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Spectral Linewidth and Linewidth Enhancement Factor in 1.5-μm Modulation-Doped Strained Multiple-Quantum-Well Lasers
• Multiple-Phase-Shift Super Structure Grating DBR Lasers
• High Temperature Operation of a 1.3-μm Spot-Size-Converter Integrated Laser Diode (SS-LD)
• 1.55 μm Butt-Jointed Distrubuted Bragg Reflector Lasers Grown Entirely by Low-Pressure MOVPE : Waves, Optics and Quantum Electronics

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