On an Appearance of Steps in the I-V Characteristics of Sb Doped Si near the Metal-Nonmetal Transition
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概要
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We have observed the existence at low temperatures of several steps in the I-V characteristics of nonmetallic Sb doped Si near the metal-nonmetal transition. The steps appear at equal intervals in the bias voltage of the I-V curve and the intervals in the voltage are independent of magnetic field. Such strongly nonlinear conduction can be explained by neither the Josephson junction effect nor the Stark ladder effect. In order to clarify the physical origin of this nonlinear conduction, we have compared it with tunneling models according to which the intervals of the step are considered to be independent of the magnetic field.
- 社団法人応用物理学会の論文
- 1987-05-20
著者
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Matsuura Etsuyuki
Institute of Physics, University of Tsukuba
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Ochiai Yuichi
Institute Of Materials Science University Of Tsukuba
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Matsuura Etsuyuki
Institute Of Physics University Of Tsukuba
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