Anomalous High Rate Reactive Ion Etching Process for Indium Tin Oxide
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概要
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An anomalous high indium tin oxide etch rate, i.e., 163O Å/min, reactive ion etching condition has been obtained, This process is based on the combination of high temperature, i.e., 25O℃, and a mixture of HCI and CH_4 gases, Throughout the whole range of the gas composition, the highest etch rate is obtainable in a small CH_4 concentration range, e.g., around 40%. The same phenomenon has been observed at different plasma powers. The influence of temperature or power to the etch rate is not obvious unless a threshold temperature or a threshold power is surpassed. The pure HCI plasma etched surface is in liquid form and has a rough topographyafter solidification. The HCI/40% CH_4 etched surface is solid and has a smooth topography, A high etch rate is contributed by near-stoichiometric surface reactions as well as strong ion bombardment.
- 社団法人応用物理学会の論文
- 1997-05-15