A Contribution of Vibrationally Excited Cl_2 Molecules to GaAs Reactive Ion Etching in Cl_2/Ar

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概要

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• The experimental results on GaAs RIE in Cl_2/Ar are considered within the framework of the ion-neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl_2 partial pressure, but fails at the increased chlorine percentage. A possible contribution of vibrationally excited Cl_2 molecules to GaAs etch rate has been considered.

• 社団法人応用物理学会の論文
• 1996-07-15

著者

• Lebedev Sergei

  Instituto De Fisica (deq) Universidade Estadual De Campinas

• Campos Delton

  Unicamp Institute Of Physics "gleb Wataghin" Deq

• Machida M

  Unicamp Institute Of Physics "gleb Wataghin" Deq

• CAMPOS Delton

  Instituto de Fisica (DEQ), Universidade Estadual de Campinas

• MACHIDA Munemasa

  Instituto de Fisica (DEQ), Universidade Estadual de Campinas

• MOSHKALYOV Stanislav

  Instituto de Fisica (DEQ), Universidade Estadual de Campinas

• Moshkalyov Stanislav

  Unicamp Institute Of Physics "gleb Wataghin" Deq

関連論文

• Polymer-C_ Composite with Ferromagnetism
• Study of Ion-Induced Secondary Photon Emission in Reactive Ion Etching Experiment
• Experimental Study of Conventional and Multipass Thomson Scattering Diagnostic Systems
• A Contribution of Vibrationally Excited Cl_2 Molecules to GaAs Reactive Ion Etching in Cl_2/Ar
• Investigation of Ferroelastic Domain Boundary Structures of MP_5O_ (M: La-Tb) and LaNbO_4 by Means of Scanning Tunneling Microscope, Atomic Force Microscope, X-Ray and Neutron Diffraction Analyses
• Analytic Study on High-Voltage Crowbar System
• Observations of the Ferroelastic Domain Structure of MP_5O_ (M:La-Tb) by means of Scanning Tunneling Microscope, Electron Spin Resonance and X-Ray Diffraction

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