100-K Operation of Al-Based Single-Electron Transistors

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概要

• 論文の詳細を見る

• We have made Al-based single-electron transistors with an artificially fabricated 20-nm island electrode by utilizing standard electron-beam lithography and three-angle shadow evaporation. A periodic gate-voltage dependence of current at above 100 K is demonstrated with this device. In addition, we increased the charging energy about 20% by using anodization.

• 社団法人応用物理学会の論文
• 1996-11-01

著者

• NAKAMURA Yasunobu

  NEC Fundamental Research Laboratories

• TSAI Jaw-Shen

  NEC Fundamental Research Laboratories

• CHEN ChiiDong

  NEC Fundamental Research Laboratories

関連論文

• Correlated Electron-Trapping Events in a One-Dimensional Channel
• Coulomb Blockade of Two Quantum Dots in Series
• A Novel Solid-State Quantum Bit in Single-Cooper-Pair Device
• Coulomb Blockade in Resistively Coupled Single-Electron Transistor : Dependence on Bias Conditions
• Implementation of Single-Electron Transistor with Resistive Gate
• Observation of Coulomb Blockade in Resistively Coupled Single Electron Transistor
• 100-K Operation of Al-Based Single-Electron Transistors
• Individual Carrier Traps in GaAs/Al_xGa_As Heterostructures (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

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