Growth of [YBa_2Cu_3O_<7-δ>]_M/[PrBa_2Cu_<3-x>Ga_xO_<7-δ>]_N Superlattices by Pulsed Laser Deposition

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PrBa_2Cu_<3-x>Ga_xO_<7-δ> thin films up to x=0.2 and YBa_2Cu_3O_<7-δ>/PrBa_2Cu_<2.8>gGa_<0.2>O_<7-δ> superlatices have been grown by pulsed laser deposition (PLD) on {100} SrTiO_3 substrate. The resitance of PrBa_2Cu_<2.8>gGa_<0.2>O_<7-δ> is 500 times higher at 77 K than the one of unsubstituted PrBa_2Cu_3O_<7-δ>. At a growth temperature of 785℃, the multilayers have c-axis normal to the substrate surface and satellite peaks have been observed up to i=±3 on X-ray diffraction spectra. At a lower growth temperatture the strtructure becomes oriented with a-axis normal to the growth interface. Secondary-ion mass spectrometry reveals no interdiffusion between Y and Pr and no diffusion of Ga into the YBa_2Cu_3O_<7-δ> layer. The 15% RBS minimum yield recorded for the superlattice indicates highly oriented growth. T_c is around 10K lower than the one of the equivalent decoupled multi1ayers grown from unsubstituted PrBa_2Cu_3O_<7-δ>.
社団法人応用物理学会の論文
1993-08-15