Time-Resolved Reflection High-Energy Electron Diffraction Monitoring of the Surface Structural Changes of Si {111} during Q-Switched Laser (532 nm) Annealing

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概要

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• Nanosecond surface structural changes during Q-switched laser annealing of a Si{111} crystal are studied with two-dimensional, time-resolved reflection of high-energy electron diffraction (RHEED) patterns obtained in real time synchronously with time-resolved optical reflectivity measurements. The detected Debye-Waller effect indicates the existence of a thermal process that results in melting of the surface. A transient crystalline surface phase is observed prior to recrystallization of the initial superstructure.

• 社団法人応用物理学会の論文
• 1993-03-15

著者

• Aoyagi Yoshinobou

  Riken The Institute Of Physical And Chemical Research

• KITRIOTIS Dimitrios

  RIKEN, The Institute of Physical and Chemical Research

• Kitriotis Dimitrios

  Riken The Institute Of Physical And Chemical Research

関連論文

• Time-Resolved Reflection High-Energy Electron Diffraction Monitoring of the Surface Structural Changes of Si {111} during Q-Switched Laser (532 nm) Annealing

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