P-Type ZnSe:N Prepared by Electron Cyclotron Resonance Radical Beam Doping during Molecular Beam Epitaxial Growth

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概要

• 論文の詳細を見る

• ZnSe doped with nitrogen (N) has been prepared by molecular beam epitaxy using N_2^*, N^* nitrogen radicals, N_2^+ ions and N atoms from an electron cyclotron resonance nitrogen plasma source. N-doped ZnSe/GaAs heteroepitaxial layers showed p-type conduction with net acceptor concentrations as high as 1.8×10^<18> cm^<-3>, and the activation rate of N atoms was 60%. Photoluminescence spectra measured at 7 K from p-type ZnSe:N layers with net acceptor concentrations higher than 10^<18> cm^<-3> were dominated by two different donor-acceptor pair emission bands with zero phonon energies of 2.684 eV and 2.697 eV.

• 社団法人応用物理学会の論文
• 1993-02-15

著者

• Horie Kayoko

  Victor Company Of Japan Ltd.

• OHTSUKA Takeo

  Central Research & Development Center

• Ohtsuka Takeo

  Central Research & Development Center

関連論文

• P-Type ZnSe:N Prepared by Electron Cyclotron Resonance Radical Beam Doping during Molecular Beam Epitaxial Growth

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