Contrast Enhancement of SAL Resist by Reducing Residual Solvent at Prebake
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概要
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An examination of prebake effects of a chemically amplified resist, SAL601-ER7, reveals that solvent retention in the film after prebake has a great effect on pattern contrast. By reducing residual solvent through a high temperature prebake (105℃), 0.8-μm lines and spaces can be obtained in a thick single layer resist of 1.8μm and 0.1-μm feature patterns with an aspect ratio of 6 can be resolved.
- 社団法人応用物理学会の論文
- 1991-07-01