Secondary Ion Yield Changes in Si due to Topography Changes during Cs^+ Ion Bombardment

概要

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Depth profiles of ^<30>Si negative secondary ions were measured at Cs^+ ion impact energies of 10.5 key, 14.5 keV and 17.5 keV and a 45° impact angle by means of secondary ion mass spectrometry (SIMS). Yield changes due to surface topography changes occurred at 14.5 keV and 17.5 keV impact energy, although no surface topography change has ever been reported during Cs^+ ion bombardment. No yield change was detected at 10.5 keV impact energy. The topography changes and ion yield changes are obviously affected by the Cs^+ ion impact energy.
社団法人応用物理学会の論文
1991-05-15