Low Thermal Budget Poly-Si Thin Film Transistors on Glass

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概要

• 論文の詳細を見る

• A new low thermal budget processing approach for polycrystalline silicon thin film transitors on 7059 glass is presented. This processing incorporates three unique steps: low temperature crystallization by broad beam tungsten halogen lamps of low temperature plasma enhanced chemical vapor deposited a-Si:H, the use of high quality gate oxide magnetron sputter deposited at 400℃, and extremely short time hydrogen passivation using an electron cyclotron resonance source. These TFT's, produced with this processing on glass, were found to have mobilities in the 60 cm^2/V・s range. The subthreshold slope of these devices was in the 1 V/decade range, the threshold voltage was around 5 volts and the on/off current ration was approximately 10^6.

• 社団法人応用物理学会の論文
• 1991-02-15

著者

• Liu Gang

  Center For Electronic Material And Processing The Pennsylvania State University

• Fonash S.J.

  Center for Electronic Material and Processing, The Pennsylvania State University

• Fonash S.j.

  Center For Electronic Material And Processing The Pennsylvania State University

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• Low Thermal Budget Poly-Si Thin Film Transistors on Glass

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