Plasma Oxidation of Copper Thin Films
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概要
- 論文の詳細を見る
The sample current against the counterelectrode during the plasma oxidation process of copper thin films were measured and the oxidation mechanism was discussed combined with the obtained reaction products on the surface. The changes and the similarities of the sample current for the plasma oxidation of copper films and YBCO multilayered films were successfully explained. It was also found that the oxidation process proceeded at a temperature lower than that needed for construction of the YBCO structure, and there was still some amount of metallic copper remaining even in the case of high-T_c sputter-deposited YBCO films.
- 社団法人応用物理学会の論文
- 1991-11-01
著者
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HASHIMOTO Misao
Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation
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Imafuku Muneyuki
Advanced Materials & Technology Research Laboratories Nippon Steel Corporation
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Ito Wataru
Advanced Materials & Technology Research Laboratories Nippon Steel Corporation
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SHIMADA Haruo
Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation
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Shimada Haruo
Advanced Materials & Technology Research Laboratories Nippon Steel Corporation
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