Deep Levels Associated with Molybdenum in Silicon

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概要

• 論文の詳細を見る

• The behavior of Mo in Si has been investigated to identify energy levels associated with Mo and to confirm the effect on electrical properties of Si using DLTS, optical-DLTS and the minority carrier recombination lifetime measurement. Four deep levels at E_c-0.27, E_c-0.34, E_c-0.58 and E_v-0.31 eV were determined as Mo-related deep levels. It is confirmed that levels at E_c-0.27, E_c-0.34 and E_v+0.31 eV are not due to the complex of Mo and a dopant. Mo degrades the minority carrier recombination lifetime. The diffusion coefficient of Mo is determined to be 2×10^<-10> cm^2/s at 1000℃.

• 社団法人応用物理学会の論文
• 1991-11-01

著者

• HAYAMIZU Yoshinori

  SEH Isobe R & D Center

• HAMAGUCHI Toshiaki

  SEH Isobe R & D Center

関連論文

• Deep Levels Associated with Molybdenum in Silicon

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