Three Dimensional Transient Simulation of Complex Silicon Devices

概要

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We present a general-purpose program for the simulation of semiconductor devices in three dimensions. This program solves the Poisson and continuity equations in steady-state and transient conditions. The implemented grid allocation scheme allows for spatial grid adaption in all directions. The linear systems are solved using preconditioned conjugate gradient-like methods. We describe the investigation of parasitic latchup in a CMOS structure and of the turn-off of a bipolar transistor with our program. Transient simulations on meshes with several lens of thousands of points can be performed within hours on a supercomputer.
社団法人応用物理学会の論文
1990-12-20