Improvement in Junction Properties of a n-Si/poly(3-methylthiophene) Heterojunction by Post-Treatment with aq.HF
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概要
- 論文の詳細を見る
Junction properties of an n-Si/poly(3-methylthiophene) (P3MeT) cell are investigated by current-voltage measurements. Efforts have been made to understand and improve the inorganic/organic interface. It was found that a great improvement in junction properties is possible by treating the cell with an aq.HF solution. Since electrical conductivity of P3MeT bulk is little affected by the HF treatment, the improvement is attributed to the enhancement in interactions between P3MeT and n-Si. The cell showed degradation upon exposure to air, but it recovered its original characteristics when it was again treated with an aq.HF solution.
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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HOSHINO Katsuyoshi
Department of Imaging Science, Faculty of Engineering, Chiba University
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KOKADO Hiroshi
Department of Imaging Science, Faculty of Engineering, Chiba University
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OGATA Takahiro
Department of Image Science, Faculty of Engineering, Chiba University
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Kokado Hiroshi
Department Of Image Science Faculty Of Engineering Chiba University
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Ogata Takahiro
Department Of Image Science Faculty Of Engineering Chiba University
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Hoshino Katsuyoshi
Department Of Image Science Faculty Of Engineering Chiba University
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Hoshino Katsuyoshi
Department of Chemical Engineering, Tokyo Institute of Technology
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