Characterization of Chemically Vapor Deposited Silicon Nitride Films from Disilane and Ammonia

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概要

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• Amorphous silicon nitride films a:SiN_x were prepared by low pressure chemical vapor deposition (LPCVD) from disilane (Si_2H_6) and ammonia (NH_3). Most of the depositions were performed at 600℃ with various NH_3/Si_2H_6 gas ratios ranging from 4 to 50. Different deposits with composition (x=N/Si) ranging from silicon-rich to stoichiometric silicon nitride were characterized by means of infrared spectroscopy (FTIR), ellipsometry, electron energy loss spectroscopy (EELS), and their structure analysed by transmission electron microscopy (TEM). Transmission infrared measurements showed low hydrogen content (<4.7%) in all the deposited films. Changes in atomic ratio (x=N/Si) and density of the films were correlated with their refractive index and discussed.

• 社団法人応用物理学会の論文
• 1995-04-01

著者

• Scheid Emmanuel

  Cemes-loe

• HENDA Redhouane

  LAAS

• LAANAB Larbi

  CNRS.

• FOURMEAUX Robert

  CNRS.

関連論文

• Characterization of Chemically Vapor Deposited Silicon Nitride Films from Disilane and Ammonia

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