New Surface-Imaging Process for Electron Beam Lithography Using Highly Oriented Polydimethylsilane Film

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概要

• 論文の詳細を見る

• The possibilities of highly oriented polydimethylsilane film for use in electron beam lithography are shown in the present work. By electron beam irradiation onto the film, submicron patterns are obtained after the etching process. The effects of electron beam irradiation on the chemical bonds in the film are also studied using Fourier transform infrared absorption spectroscopy. The oriented character and the high density of the film are advantageous to the resolution, and the irradiated area shows excellent resistance to acid through the formation of the C-O-C, Si-O-C, and/or Si-O-Si bonds.

• 社団法人応用物理学会の論文
• 1995-02-01

著者

• Furukawa Shoji

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• Takeuchi Ken-ichiro

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

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