Fabrication of 300 Å Thick BiSrCaCuO Thin Films with T_c of 108 K by use of Ion Implantation

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概要

• 論文の詳細を見る

• BiSrCaCuO thin films of 300 Å thickness were deposited on MgO(100) substrates by magnetron sputtering and were subsequently annealed at 875℃ for 0.5 h. The annealed films exhibited markedly high T_c values in the range of 90 K. These films were irradiated with 100 keV Ar ions at 10 K and finally annealed at 730℃ for 0.5 h. The T_c of these films increased to 108 K which is equivalent to the maximum value so far reported for this system. The role of 100 keV Ar ions in the film fabrication is described in terms of elastic nuclear collision events in the low-energy cascade region.

• 社団法人応用物理学会の論文
• 1992-08-01

著者

• SAITO Kazuo

  National Research Institute of Brewing

• KAISE Masatsugu

  National Research Institute for Metals

• Saito Kazuo

  National Research Institute For Metals

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