Different Defect Patterns in Stacked Silicon Films Obtained by Radiative-Heating Zone-Melting Recrystallization

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概要

• 論文の詳細を見る

• The simultaneous zone melting recrystallization of two stacked silicon layers is reported. Branching subgrain boundaries were revealed in the bottom film. Considerably more subtle, straight, parallel, non-branching defect trails were observed in the top layer. The present experiments prove that previous models that attribute this difference to the macroscopic in-plane thermal stress field cannot account for this large difference. The typical defect structure obtained in the top film is thought to be (directly) related to the radiative type of heating applied to this top layer.

• 社団法人応用物理学会の論文
• 1992-02-01

著者

• MAES H.E.

  Interuniversity Micro-Electronics Center

• MERTENS P.W.

  Interuniversity Micro-Electronics Center

関連論文

• Intensity Profiling of an Unattenuated, Focused High Power cw Argon-Ion Laser Beam
• Different Defect Patterns in Stacked Silicon Films Obtained by Radiative-Heating Zone-Melting Recrystallization

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