The Effect of Electrochemical Reduction and UV Exposure in H_2S Gas on Interface Properties of ZnS/p-Hg_<1-x>Cd_xTe
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概要
- 論文の詳細を見る
A novel surface treatment method for o btaining high quality ZnS/Hg_<1-x>Cd_xTe interface is proposed. The treatment procedure includes bromine-methanol etching, electrochemical reduction in an acetate buffer solution, and UV exposure in H_2S gas ambient inside a vacuum chamber. After the surface treatment is performed, 4500 Å-thick ZnS film is in situ evaporated on the Hg_<1-x>Cd_xTe surface in the same chamber used for the UV treatment without exposing the surface to atmosphere. The interface properties estimated from MIS capacitors show the positive fixed interface charge density of 3×10^<10> cm^<-2> and the insulator trap charge density of 1.8×10^<10> cm^<-2>. The interface trap density is lower than 10^<12> cm^<-2>・eV^<-1> over most of the bandgap and the minimum interface trap density is 4.5×10^<10> cm^<-2>・eV^<-1> near the middle of the bandgap. The effect of each step of the surface treatment procedure is also investigated by MIS capacitors. All steps seem to be significant.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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Kim Choong-ki
Department Of Electrical Engineering And Center For Electro-optics Korea Advanced Institute Of Scien
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Lee Hee-chul
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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JEONG Jae-Hong
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Jeong Jae-hong
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Lee Hee-Chul
Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 429-793, Korea
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