Spin-Polarized Electron Tunneling in Ni/Al_2O_3/Co Junction and Large Magnetoresistance of Ni/Co Double Layers

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概要

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• The magnetic field dependence of the tunnel resistance of Ni/Al_2O_3/Co junctions and the resistance across the interfaces of Ni/Co junctions was studied. Both types of junctions showed the magnetic valve effect, in which junction resistances vary with the angle between the magnetizations of Ni and Co electrodes. For Ni/Co junctions, additional peaks were observed on the resistance versus magnetic field curves at the coercive fields of Co electrodes, suggesting the effect of magnetic domains formed in the junction area in the magnetization process. The relative change in resistance for the Ni/Co junction showed a large value of 16.4%.

• 社団法人応用物理学会の論文
• 1992-10-01

著者

• Takahashi Fumiaki

  Faculty Of Engineering Yokohama National University:(present Address) Imaging Research Dept. 22 Cano

• Gondo Y

  Faculty Of Engineering Yokohama National University:(present Address) Faculty To Engineering Kyushu

• Gondo Yasuo

  Faculty Of Engineering Yokohama National University

• SUEZAWA Yoshitaka

  Faculty of Informatics, Teikyo University of Technology

• Suezawa Y

  Faculty Of Informatics Teikyo University Of Technology

関連論文

• Spin-Polarized Electron Tunneling in Ni/Al_2O_3/Co Junction and Large Magnetoresistance of Ni/Co Double Layers
• Growth of the High-T_c Phase in the Bi-Pb-Sr-Ca-Cu-O Superconducting Oxide System

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