DC and AC Characteristics of ZnSe/Ge/GaAs and ZnSe/InGaAs/GaAs Lattice-Matched Heterojunction Bipolar Transistors Grown by Metal-Organic Chemical Vapor Deposition

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概要

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• We report the first demonstration of ZnSe/Ge/GaAs and ZnSe/InGaAs/GaAs closely lattice-matched heterojunction bipolar transistors (HBTs) grown by the low-pressure metal-organic chemical vapor deposition (MOCVD) system. Both ZnSe/Ge/GaAs and ZnSe/InGaAs/GaAs HBTs have advantages of larger valence band offset (ΔE_v), lower base resistance, and lower contact resistance compared with the AlGaAs/GaAs HBT for high-speed digital circuits. Based on S-parameter measurements at 77 K, a unity-gain cutoff frequency f_T=6 GHz and a maximum oscillation frequency f_<max>=13 GHz at a collector current density of 1.8 kA/cm^2 were obtained for the ZnSe/Ge/GaAs HBT. To our knowledge, this is the first II-VI/IV/III-V compound-seuniconductor HBT ever reported to operate at such a high frequency.

• 社団法人応用物理学会の論文
• 1994-12-15

著者

• Shen Ji

  Department Of Electrical Engineering Nan-jeon College Of Technology

• Tseng Hsien

  Department Of Electrical Engineering Nan-jeon College Of Technology

• HSIEH Ru

  Department of Electrical Engineering, Nan-Jeon College of Technology

• Hsieh Ru

  Department Of Electrical Engineering Nan-jeon College Of Technology

関連論文

• DC and AC Characteristics of ZnSe/Ge/GaAs and ZnSe/InGaAs/GaAs Lattice-Matched Heterojunction Bipolar Transistors Grown by Metal-Organic Chemical Vapor Deposition

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