Resistivity Study of P-, B-, and BF_2-Implanted Polycrystalline Si_<1-x>Ge_x Films with Subsequent Annealing

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概要

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• Thin polycrystalline Si_<1-x>Ge_x films with low resistivities have been achieved by low pressure chemical vapor deposition (LPCVD) with subsequent ion implantation and thermal annealing. The sheet resistance decreased drastically as the Ge content increased to 36 atomic percent. Even at a moderate dose of 1.5×10^<15>/cm^2, a resistivity of 8.3×10^<-4> Ω・cm was obtained for B^+-doped samples and 3.8×10^<-4> Ω・cm for P^+-doped samples. Further-more, stability of the resistivity values after sintering was confirmed. Poly-Si_<1-x>Ge_x can be used for new applications in Si LSIs such as fine-patterned MOS gates or germanosilicide interconnects.

• 社団法人応用物理学会の論文
• 1994-12-15

著者

• Reif Rafael

  Microsystems Technology Laboratories Massachusetts Institute Of Technology

• Tsai Julie

  Microsystems Technology Laboratories Massachusetts Institute Of Technology

• Noguchi Takashi

  Microsystems Technology Laboratories Massachusetts Institute Of Technology:sony Corp.

• TANG Andrew

  Microsystems Technology Laboratories, Massachusetts Institute of Technology

• Tang Andrew

  Microsystems Technology Laboratories Massachusetts Institute Of Technology

• REIF Rafael

  Microsystems Technology Laboratories, Massachusetts Institute of Technology

関連論文

• Evaluation of Pentafluoroethane and 1, 1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool
• Deposition and Characterization of Silicon-Germanium Alloy Thin Films on Oxide
• Resistivity Study of P-, B-, and BF_2-Implanted Polycrystalline Si_Ge_x Films with Subsequent Annealing

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