Effect of Higher Silanes in Silane Plasmas on Properties of Hydrogenated Amorphous Silicon Films
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概要
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The properties of hydrogenated amorphous silicon (a-Si:H) were investigated and correlated to the densities of neutral higher silane (HS) molecules in silane radio frequency (rf) glow discharge plasmas which are used to grow a-Si:H films. The suppression of defect densities at the light soaked state was observed for "device-grade" a-Si:H with a decrease in the density of HS. On the basis of the dependence of the density of HS on the deposition rate, it is suggested that deterioration of the properties of a-Si:H deposited at a high deposition rate is attributed to the increase in the number of HSs in silane plasmas.
- 社団法人応用物理学会の論文
- 1999-11-15
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