The Grotesques of Oval Defects on the MBE-Grown GaAs Layers

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概要

• 論文の詳細を見る

• In addition to the regular oval defect, two grotesque features, named pyramidal and ellipsoidal shaped defects, have been observed on MBE-grown GaAs layers. Those grotesque defects were demonstrated to have come from a foreign contamination of the Ga source. A method for reducing those defects is also proposed.

• 社団法人応用物理学会の論文
• 1987-05-20

著者

• Lee C.

  Chung-Ang University

• Chou Y.

  Chung Shan Institute Of Science And Technology

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• The Grotesques of Oval Defects on the MBE-Grown GaAs Layers

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