An Improved Tight Binding Band Structure Calculation of (GaAs)_n/(AIAs)_n (n=1〜4) Superlattices

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概要

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• The electronic band structure of (GaAs)_n/(AIAs)_n(n=1〜4) superlattices is investigated by means of an improved tight binding method, in which the overlap integrals up to the second nearest neighbor atoms, including new parameters, are explicitly taken into account in order to improve the fitting of the lowest conduction band in the bulk materials to the results of the pseudopotential method. The two cases of band offset values based on Dingle's rule and Kroemer's rule are employed and the resulting band structure is compared. The oscillator strength between the valence band top and the three o f the lower conduction band minima at Г-point is calculated and compared with a photoluminescence experiment.

• 社団法人応用物理学会の論文
• 1987-05-20

著者

• Nara Shigetoshi

  Central Research Laboratory Mitsubishi Electric Corporation

関連論文

• Quasiparticle-Injected Superconducting Weak Links and Their Application to dc SQUID
• An Improved Tight Binding Band Structure Calculation of (GaAs)_n/(AIAs)_n (n=1〜4) Superlattices
• The rf Response of Quasiparticle Injected Superconducting Weak Links

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