Annealing Effects in Aluminum Films Vacuum-Deposited on Room-Temperature Substrate

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概要

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• Aluminum films were vacuum-deposited on glass substrates at 27℃, and the annealing effects of the films were examined. The electrical resistivity decays were measured during the annealing, and the grain size of the films was also investigated by electron microscopy. The activation energy of the resistivity decay at temperatures between 27℃ and 130℃ was 0.9〜1.2 eV, and the resistivity decrease due to the annealing was attributed to the annihilation of the dislocations. The dislocation density in the deposited films was estimated to be 5×10^<-11> Ω・cm^2. Furthermore, the specific grain boundary resistivity in the deposited films was estimated to be 3×10^<-12> Ω・cm^2.

• 社団法人応用物理学会の論文
• 1986-03-20

著者

• Kawakita Kazuhiko

  Faculty Of Education Miyazaki University

関連論文

• Recovery Process in Vacuum Deposited Aluminum Films at Room Temperature
• Annealing Effects in Aluminum Films Vacuum-Deposited on Room-Temperature Substrate

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