Silicon Nitride Films Prepared by Plasma-Enhanced Chemical Vapour Deposition (PECVD) of SiH_4/NH_3/N_2 Mixtures : Some Physical Properties

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概要

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• Experimental data are presented on the effects of varying deposition parameters of SiH_4/NH_3 gas flow ratio, rf power, deposition pressure and substrate temperature, on the deposition rate, refractive index, hydrogen content and etch rates of PECVD silicon nitride films. BHF etch rate in these films are generally high and this is shown to be associated with the high hydrogen content. N-H and Si-H bond concentrations are measured in the range 1-4×10^<22> cm^<-3>. The substrate temperature dependence of the etch rate exhibits a maximum for films deposited at 150℃. The behaviour is attributed to the incorporation of both hydrogen and oxygen, the effects on the etch rate of which are suggested to act in opposing directions.

• 社団法人応用物理学会の論文
• 1986-10-20

著者

• Kwok C.

  Microelectronics Laboratory Department Of Electrical Engineering National University Of Singapore

• Ling C.

  Microelectronics Laboratory Department Of Electrical Engineering National University Of Singapore

• PRASAD K.

  Microelectronics Laboratory, Department of Electrical Engineering, National University of Singapore

• Prasad K.

  Microelectronics Laboratory Department Of Electrical Engineering National University Of Singapore

関連論文

• Silicon Nitride Films Prepared by Plasma-Enhanced Chemical Vapour Deposition (PECVD) of SiH_4/NH_3/N_2 Mixtures : Some Physical Properties

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