Epitaxial Growth of Se Films Deposited on UHV-Cleaved KI Irradiated by Electrons

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概要

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• The epitaxial growth of Se deposits on UHV-cleaved KI surfaces irradiated by electrons at a dose of 10^<14>-10^<18> electrons/cm^2 at 250-1000 eV has been studied by transmission electron microscopy and electron diffraction. In the absence of electron irradiation, the Se deposits have a strong preferred orientation (1010)Se//(001)KI and [0001]Se//[110] and [110]KI. With electron irradiation, the (3368) plane of the deposits is approximately parallel to the substrate surface, and the [1100] direction of Se is parallel to the [100] and [010] of KI in addition to the above orientation. The epitaxial growth of the (3368) plane depends on the irradiation dose rather than on incident electron energy, and the deposition rate ranges from 0.5 to 8 Å/s. The morphology of the Se deposits changes drastically depending on the rate of deposition and/or time of exposure to a UHV atmosphere after electron irradiation.

• 社団法人応用物理学会の論文
• 1984-12-20

著者

• Ogura I

  Nihon Univ. Koriyama

• Ogura Iwao

  College Of Engineering Nihon University

• Nagashima Seiichi

  College Of Engineering Nihon University

関連論文

• Disappearance of Step Decoration on Electron Irradiated Surfaces of NaCl
• Epitaxial Growth of Se Films Deposited on UHV-Cleaved KI Irradiated by Electrons
• Morphological Changes in Se Films Deposited on KI Irradiated by Electrons
• (110) Orientation of Vacuum Evaporated Ag Deposits on NaCl Surfaces in the Atmospheres of Inactive Gases
• The Role of Low Energy Electron Irradiation in the Ag Step Decoration on Cleaved Surfaces of NaCl

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