Morphological Changes in Se Films Deposited on KI Irradiated by Electrons

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The morphology and epitaxial growth of Se deposits on air- and vacuum-cleaved KI surfaces irradiated by electrons at a dose of 10^9-10^<14> electrons/cm^2・s at 250 eV, in both high vacuum and UHV conditions, have been studied by transmission electron microscopy and diffraction. Without the electron irradiation, Se deposits of nearly square shapes grew with the orientation (1010), [0001]Se//(001), [110][110]KI. With electron irradiation in high vacuum, the morphology of the Se deposits changed drastically, depending on the cleavage and the irradiation density. The epitaxy gradually worsened with increasing irradiation density. With heavy irradiation in high vacuum, amorphous Se deposits were formed. In the case of UHV, the epitaxy was good, and amorphous Se deposits were not observed. The mechanism of formation of the amorphous Se deposits is discussed in terms of the contamination layer produced by the interaction between the electron beam and residual gases.
社団法人応用物理学会の論文
1982-11-20