Properties of the S/N Ratio of the Beat Note in Frequency-Mixing Using the W-Ni Point Contact Diode at 32 THz
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概要
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By mixing the radiation from two CO_2 lasers (about 10 MHz apart, oscillating at R(24) of the 9.4 μm band in a W-Ni diode) the S/N ratio of the beat note was measured as a function of the incident laser power, the distance from the focal point of a lens, the incident angle onto the diode, the detected dc voltage, and the diode resistance. Furthermore, for frequency-mixing between R(24) and R(26) of the 9.4 μm band, the dependence of the S/N ratio on the diode resistance, the incident power of the CO_2 laser and the microwave radiation on the diode is described. The detector performance is evaluated regarding the responsivity, effective coupling efficiency and noise equivalent power.
- 社団法人応用物理学会の論文
- 1988-01-20
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