Inhomogeneous Broadening of Zeeman Absorption Peak of Shallow Donor in Semi-Insulating GaAs
スポンサーリンク
概要
- 論文の詳細を見る
Magnetooptical absorption measurements of shallow donors in semi-insulating GaAs are carried out to investigate the roles of EL2 centers for the Zeeman absorption peak of shallow donors. The transition from a stable state to a metastable state of EL2 centers by infrared irradiation involves a photoquenching of EL2, which also induces a decrease of shallow donors. Photoquenching changes the role of EL2 as a compensator. The change of the compensation affects the linewidth of the absorption peak due to the Stark effect. In that effect, contributions from the transition and from ionization of EL2 are studied separately. Although the delay time variation of the absorption intensity of the peak after pulsed bandgap excitation is sensitive to photoquenching, the linewidth is almost independent of the transition. Ionization, however, causes broadening of the linewidth.
- 社団法人応用物理学会の論文
- 1999-11-15
著者
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FUJII Ken-ichi
Graduate School of Science, Osaka University
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OHYAMA Tyuzi
Graduate School of Science, Osaka University
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Ohyama Tyuzi
Graduate School Of Science Osaka University
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Hosokawa Makoto
Graduate School Of Science Osaka University
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Fujii Ken-ichi
Graduate School Of Science Osaka University
関連論文
- Far-Infrared Magneto-Optical Absorption of Vertically Aligned Double Dot Array System
- Potential Modulation of Semiconductor Dot Array System due to Photoexcitation
- Inhomogeneous Broadening of Zeeman Absorption Peak of Shallow Donor in Semi-Insulating GaAs
- Far-Infrared Magneto-Optical Absorption of Vertically Aligned Double Dot Array System