Numerical Analysis of the Nucleation Process for Metallic Clusters in the Ionized Cluster Beam Technique
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概要
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The nucleation process in the ionized cluster beam technique is numerically analyzed to clarify the condition for producing metallic clusters. The mean free path of monomers in the crucible and the Knudsen number are calculated under experimental conditions to judge the magnitude of the collision rate of monomers. The steady-state nucleation rate is calculated as a function of the crucible temperature and the Mach number to evaluate the effects of crucible conditions and nozzle geometry on the nucleation rate. The numerical results for various metals are consistent with the existing experiments.
- 社団法人応用物理学会の論文
- 1999-06-15
著者
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Nishioka K
Department Of Optical Science And Technology The University Of Tokushima
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Nishioka Kazumi
Department Of Precision Mechanics Tokushima University
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Sanada Masaaki
Course in Materials Science and Engineering, Graduate School of The University of Tokushima
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DONKAI Nobuyuki
Course in Mechmical Engineering, Graduate School of The University of Tokushima
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Sanada Masaaki
Course In Materials Science And Engineering Graduate School Of The University Of Tokushima
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Donkai Nobuyuki
Course In Mechmical Engineering Graduate School Of The University Of Tokushima
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Nishioka Kazumi
Department of Optical Science and Technology, The University of Tokushima
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NISHIOKA Kazumi
Department of Optical Science and Technology, Faculty of Engineering, University of Tokushima
関連論文
- Molecular Theoretical Study of Diffuseness of Crystal-Melt Interface
- HOMOGENEOUS NUCLEATION IN VAPOR PHASE(Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)
- Theoretical and numerical studies of nucleation kinetics
- Numerical Analysis of the Nucleation Process for Metallic Clusters in the Ionized Cluster Beam Technique
- Numerical Simulation of the Kinetic Critical Nucleus
- Rapid-incorporation path of growth units on surfaces during crystal growth
- Kinetic smoothening and habit change during crystal growth