Effect of CF_4 Addition on Downflow Ashing under Atmospheric Pressure

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概要

• 論文の詳細を見る

• We studied the rate increase of ozone ashing under atmospheric pressure. It was verified that when an ozonizer discharge was used under atmospheric pressure, the ashing rate increased to up to one and a half times the original rate with the addition of CF_4 F element and C-F bonds, which might appear as a result of the addition of CF_4, were not detected on the resist surface by Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) analyses. On the other hand, the formation of HF and an increase in CO and CO_2 were observed by FT-IR analysis of the excited gas. Therefore, the increased ashing rate with the addition of CF_4 is likely due to the active decomposition product which contains fluorine radicals produced in the discharge. These active species are transported under atmospheric pressure and cause H extraction from -OH groups which exist in the resist and result in improved oxidative decomposition.

• 社団法人応用物理学会の論文
• 1999-06-15

著者

• Omiya K

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Saito Shuichi

  Manufacturing Engineering Research Center Toshiba Corporation

• KATAOKA Yoshinori

  Manufacturing Engineering Research Center, Toshiba Corporation

• OMIYA Kayoko

  Manufacturing Engineering Research Center, Toshiba Corporation

• Kataoka Yoshinori

  Manufacturing Engineering Research Center Toshiba Corporation

関連論文

• A Highly Selective Photoresist Ashing Process for Silicon Nitride Films by Addition of Trifluoromethane : Semiconductors
• Effect of CF_4 Addition on Downflow Ashing under Atmospheric Pressure

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