Glancing-Angle Electron Beam Bombardment for Modification of GaN Epilayer Growth using Plasma-Assisted Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• We report the observation of significant enhancement in the structural and electrical properties of GaN epilayers grown by utilizing electron-beam (EB) irradiation ; EB bombardment was successfully employed to achieve a high-quality GaN epilayer at a growth rate as high as 0.6μm/h at a low temperature of 680℃. EB irradiation resulted in a marked reduction of dislocation density with smoother surfaces and a decrease in carrier concentration of approximately one order of magnitude.

• 社団法人応用物理学会の論文
• 1999-04-15

著者

• Shim K‐h

  Electronics And Telecommunications Res. Inst. Taejon Kor

• Paek Mun-cheol

  Microelectronics Technology Research Laboratory Electronics And Telecommunications Research Institut

• Cho Kyoung-ik

  Microelectronics Technology Research Laboratory Electronics And Telecommunications Research Institut

• SHIM Kyu-Hwan

  Wide Bandgap Semiconductor Team, Microelectronics Technology Laboratory, Electronics and Telecommuni

• PAEK Mun-Cheol

  Wide Bandgap Semiconductor Team, Microelectronics Technology Laboratory, Electronics and Telecommuni

• CHO Kyoung-Ik

  Wide Bandgap Semiconductor Team, Microelectronics Technology Laboratory, Electronics and Telecommuni

関連論文

• Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
• Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy
• Glancing-Angle Electron Beam Bombardment for Modification of GaN Epilayer Growth using Plasma-Assisted Molecular Beam Epitaxy

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